Sandia National Labs has demonstrated a high power 1200V MOSFET using gallium nitride (GaN) using a hafnium gate with a ...

Persistent Link: https://ieeexplore.ieee.org/servlet/opac?punumber=55 ...

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Department of Chemistry, NIS Interdepartmental and INSTM Reference Centre, University of Torino, Via G. Quarello 15/A, 10135 and Via P. Giuria 7, 10125 Turin, Italy ...

The melting point is one of the most important measurements of material properties, which informs potential applications of ...

Department of Materials Science and Engineering, University of Virginia, Charlottesville, Virginia 22904, United States ...

In a year erupting with big developments in science, technology and medicine, how well can you separate breakthroughs from ...

A bigger clampdown looks set to have far-reaching ramifications for supply chains feeding American defense and chip-making ...

Over 4.6 billion years ago, the early Earth emerged from a swirling disk of gas and dust encircling the young sun. This ...